Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems
Features
High-power output, high-efficiency : P
O
= 7.5 mW (typ.)
Fast response and high-speed modulation capability :
t
r
, t
f
= 1
碌s
(typ.)
LN151F
酶4.6鹵0.15
Unit : mm
Glass window
12.7 min.
4.5鹵0.2
2-酶0.45鹵0.05
2.54鹵0.25
0.
0
鹵
1.
2
5
45
鹵
Infrared light emission close to monochromatic light :
位
P
= 950 nm (typ.)
Narrow directivity, suitable for effective use of radiant power
(LN151L)
Wide directivity, matched for external optical systems (LN151F)
TO-18 standard type package
1.
0
鹵
0.
1
3藲
2 1
酶5.75 max.
1: Anode
2: Cathode
LN151L
酶4.6鹵0.15
Unit : mm
Glass lens
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
2
3
鈥?5 to +100
鈥?0 to+100
Unit
mW
mA
A
V
藲C
藲C
12.7 min.
6.3鹵0.3
2-酶0.45
鹵
0.05
2.54鹵0.25
0
鹵
1.
2
0.
15
f = 100 Hz, Duty cycle = 0.1 %
3藲
45
鹵
1.
0
鹵
0.
2 1
酶5.75 max.
1: Anode
2: Cathode
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
LN151F
LN151L
Symbol
P
O
位
P
鈭單?/div>
V
F
I
R
C
t
t
r
t
f
胃
Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
I
FP
= 100mA
The angle in which radiant intencity is 50%
min
5
typ
7.5
950
50
1.3
60
1
1
32
8
max
Unit
mW
nm
nm
1.6
10
V
碌A
pF
碌s
碌s
deg.
deg.
1
1
2
