鈥?/div>
+21dBm Output Power @ 1dB Gain Com pression
18dB Typical Gain
10dB Input/Output Return Loss
+5Volts Dual Bias Supply
DC Decoupled RF Input and Output
Chip Size : 0.85
mm
X1.95
mm
(.034鈥漍.077鈥?
Chip Thickness : 100
碌
m (.004鈥?
2
Pad Dim ension : 100X100
碌
m
31 GHz Medium Power Amplifier
LMA443
Description
The LMA443 is a m edium power PHEMT am plifier that operates from 28.5 to 31.5GHz. This 3-stage am plifier provides
18dB linear power gain with 1dB gain com pression power output of greater than +21dBm . The LMA443 is designed for
LMDS CPE (consum er prem ises equipm ent) applications. Ground is provided to the circuitry through vias to the
backside m etallization.
Electrical Specifications
at T
a
=25
擄
C
(V
DD
=+5V, Z
IN
=Z
OUT
=50
鈩?/div>
)
Lim it
Typ.
18
360
鹵
1
-10
-10
-40
2
19
21
Sym bol
BW
S
21
I
DSS
鈭?/div>
S
21
RL
IN
RL
OUT
S
12
P
-1dB
P
SAT
Param eter
Operating Bandwidth
Sm all Signal Gain
Drain Current at Saturation
Sm all Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Com pression Power
Saturated Output Power
Test Conditions
@ .75 I
DSS
@ I
DSS
Min.
28.5
17
165
Max.
31.5
495
鹵
2
@ .75 I
DSS
17
Units
GHz
dB
mA
dB
dB
dB
dB
dBm
dBm
Absolute Maximum Ratings
Sym bol
V
DD
I
DD
P
IN
Pt
T
CH
T
STG
T
MAX
Param eter
/
Conditions
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Tem perature
Storage Tem perature
Max. Assem bly Tem p.
(1 m in. m ax.)
Min.
Max.
8
495
15
4
150
165
300
Units
Volts
mA
dBm
W
擄
C
擄
C
擄
C
-65
Notes:
1. This GaAs MMIC is susceptible to dam age from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
2. Higher output power of greater than +23.5dBm can be achieved when applying higher V
DD
of 5.5 volts.
3. Specifications subject to change without notice.
Phone:
(408) 988-1845
Internet:
http://www.filtronicsolidstate.com
PRELIMINARY Data Sheet
FAX:
(408) 970-9950
1
2
