鈥?/div>
4.5dB Typical Noise Figure
15dB Typical Gain
18dBm Saturated Output Power
12dB Input/Output Return Loss Typical
2-10GHz Frequency Bandwidth
+8 Volts Single Bias Supply
DC Decoupled RF Output
Chip Size : 1.62
mm
X1.62
mm
(.064鈥漍.064鈥?
Chip Thickness : 100碌m
2
Pad Dimension : 100碌m
2-10GHz MESFET Amplifier
LMA116
Description
The Filtronic LMA116 is a GaAs monolithic distributive amplifier which operates from 2 to 10GHz. This amplifier is self biased and four
450碌m FETs are used to produce a typical gain of 15dB and a noise figure of 4.5dB. The LMA116 is suitable for gain block, low noise and
driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications
at T
a
=25
擄C
(V
DD
=+8.0V, Zin=Zout=50鈩?
Limit
Typ.
15
80
鹵1
4.5
-10
-14
-40
15
125
鹵1.5
5.5
Symbol
BW
S21
Ids
鈭哠21
NF
RLin
RLout
S12
P-1dB
Parameter
Operating Bandwidth
Small Signal Gain
Drain Operating Current
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Compression Power
Test Conditions
V
D
=8V, V
G
=3.5V
,
Rs
1
=5鈩?/div>
Min.
2
13
55
Max.
10
Units
GHz
dB
mA
dB
dB
dB
dB
dB
dBm
@ .5Idss
-35
12.5
Absolute Maximum Ratings
Symbol
Vdd
Idd
Pin
Pt
Tch
Tstg
Tmax.
Parameter/Conditions
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
Max. Assembly Temp.
(1 min. max.)
Min.
Max.
12
125
24
1.5
150
165
300
Units
Volts
mA
dBm
W
擄C
擄C
擄C
-65
Notes
:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
3. On-chip 5鈩?resistor set Ids of 80mA typical.
DSS 006 WC
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
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