LL5711 and LL6263
Schottky Diodes
Features
鈥?For general purpose applications
Cathode Band
MiniMELF (SOD-80C)
鈥?Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
鈥?The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications.
鈥?This diode is also available in the DO-35 case
with type designation 1N5711 and 1N6263.
.063 (1.6)
Dia.
.051 (1.3)
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
Cathode Band Color:
Green
Packaging Codes/Options:
D1/10K per 13鈥?reel (8mm tape), 20K/box
D2/2.5K per 7鈥?reel (8mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25擄C ambient temperature unless otherwise specified.
Parameter
Peak Inverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10碌s Square Wave
Junction Temperature
Storage Temperature Range
LL5711
LL6263
Symbol
V
RRM
P
tot
I
FSM
T
j
T
S
Value
70
60
400
(1)
2.0
125
鈥?5 to +150
Unit
V
mW
A
擄C
擄C
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
LL5711
LL6263
J
= 25擄C unless otherwise noted)
Symbol
V
(BR)R
I
R
V
F
C
tot
t
rr
Test Condition
I
R =
10碌A(chǔ)
V
R
= 50V
I
F
= 1.0mA
I
F
= 15mA
V
R
= 0V, f = 1MHz
I
F
= I
R
= 5mA,
recover to 0.1I
R
Min
70
60
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Typ
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鈥?/div>
鈥?/div>
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Max
鈥?/div>
鈥?/div>
200
0.41
1.0
2.2
1
Unit
V
nA
V
pF
ns
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
10/6/00
LL5711相關(guān)型號(hào)PDF文件下載
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英文版
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