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LH52D1000 Datasheet

  • LH52D1000

  • CMOS 1M (128K x 8) Static Ram

  • 83.70KB

  • 12頁(yè)

  • SHARP

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LH52D1000
FEATURES
鈥?/div>
Access time: 85 ns (MAX.),
100 ns (MAX.)
鈥?/div>
Current consumption:
Operating: 40 mA (MAX.)
6 mA (MAX.) (t
RC
, t
WC
= 1
碌s)
Standby: 45
碌A(chǔ)
(MAX.)
鈥?/div>
Data Retention:
1.0
碌A(chǔ)
(MAX. V
CCDR
= 3 V, t
A
= 25擄C)
鈥?/div>
Single power supply: 2.7 V to 3.6 V
鈥?/div>
Operating temperature: -40擄C to +85擄C
鈥?/div>
Fully-static operation
鈥?/div>
Three-state output
鈥?/div>
Not designed or rated as radiation
hardened
鈥?/div>
Packages:
32-pin 8
脳
20 mm
2
TSOP
32-pin 8
脳
13.4 mm
2
STSOP
鈥?/div>
N-type bulk silicon
DESCRIPTION
The LH52D1000 is a static RAM organized as
131,072
脳
8 bits which provides low-power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
CMOS 1M (128K
脳
8) Static Ram
PIN CONNECTIONS
32-PIN TSOP
32-PIN STSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TOP VIEW
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
1
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
GND
I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
A
3
52D1000S-1
Figure 1. Pin Connections for TSOP
and STSOP Packages
1

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