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LF357N Datasheet

  • LF357N

  • Series Monolithic JFET Input Operational Amplifiers

  • 23頁

  • NSC

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LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
December 2001
LF155/LF156/LF256/LF257/LF355/LF356/LF357
JFET Input Operational Amplifiers
General Description
These are the first monolithic JFET input operational ampli-
fiers to incorporate well matched, high voltage JFETs on the
same chip with standard bipolar transistors (BI-FET
鈩?/div>
Tech-
nology). These amplifiers feature low input bias and offset
currents/low offset voltage and offset voltage drift, coupled
with offset adjust which does not degrade drift or
common-mode rejection. The devices are also designed for
high slew rate, wide bandwidth, extremely fast settling time,
low voltage and current noise and a low 1/f noise corner.
n
Logarithmic amplifiers
n
Photocell amplifiers
n
Sample and Hold circuits
Common Features
n
Low input bias current: 30pA
n
Low Input Offset Current: 3pA
n
High input impedance: 10
12
鈩?/div>
n
Low input noise current:
n
High common-mode rejection ratio:
n
Large dc voltage gain: 106 dB
100 dB
Features
Advantages
n
Replace expensive hybrid and module FET op amps
n
Rugged JFETs allow blow-out free handling compared
with MOSFET input devices
n
Excellent for low noise applications using either high or
low source impedance 鈥?very low 1/f corner
n
Offset adjust does not degrade drift or common-mode
rejection as in most monolithic amplifiers
n
New output stage allows use of large capacitive loads
(5,000 pF) without stability problems
n
Internal compensation and large differential input voltage
capability
Uncommon Features
LF155/
LF355
j
Extremely
LF156/
LF256/
LF356
1.5
LF257/
LF357
(A
V
=5)
1.5
Units
4
碌s
fast settling
time to
0.01%
j
Fast slew
5
2.5
20
12
5
12
50
20
12
V/碌s
MHz
rate
j
Wide gain
Applications
n
n
n
n
Precision high speed integrators
Fast D/A and A/D converters
High impedance buffers
Wideband, low noise, low drift amplifiers
bandwidth
j
Low input
noise
voltage
Simplified Schematic
00564601
*
3pF in LF357 series.
BI-FET
鈩?/div>
, BI-FET II
鈩?/div>
are trademarks of National Semiconductor Corporation.
漏 2001 National Semiconductor Corporation
DS005646
www.national.com

LF357N 產(chǎn)品屬性

  • STMicroelectronics

  • 1

  • 80 dB

  • 10 mV

  • 200 pA

  • Through Hole

  • PDIP-8

  • 50 V/us

  • No

  • + 70 C

  • 0 C

  • 50

  • 10 mA

  • BiFET

  • 106.02 dB

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