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RF MOSFET Power Transistor,
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
Applications
Broadband Linear Operation
500鈥榯iHz
to
1200 MHz
IOW, 28V
LF281 OA
Absolute Maximum Ratings at 25擄C
F
G
6.22
Ll4
2.92
L40
1.96
3.61
6048
1.40
310
1.65
2.46
4.37
,245
,045
.I15
,055
-077
642
z?ss
.055
x5
,065
,097
572
H
J
K
L
Electrical Characteristics
at 25擄C
Output Capacitance
Reverse
Capacitance
Cass
CRSS
GP
10
50
-
10
pF
pF
dB
%
-
V,,=28.0 V, F=l .OMHz
V,,=26.0 V, F=l .OMHz
V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz
V,,=28.0 V, I,,,=1 00 mA, P,,=lO.O
W,
F=l .OGHz
V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz
4.8
-
-
2O:l
Power Gain
Drain Efficiency
Load Mismatch Tolerance
q0
VSWR-T
Specifica!ions Subject to Change Without Notice.