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=
RF MOSFET Power Transistor, 5W, 28V
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
AppIications
. *Broadband Linear Operation
500 MHz to 1400 MHz
LF2805A
Absolute Maximum Ratings at 25擄C
Electrical Characteristics at 25擄C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV,,,
鈥楧ss
I
GSS
V
GSCTW
GM
C
ISS
Coss
CRSS
GP
鈥?D
VSWR-T
10
50
-
2.0
Min
65
-
Max
-
1.0
1.0
6.0
Units
V
mA
p-4
V
lest Conditions
V,,=O.O V, 1,,=2.0 mA
V,,=28.0 V, V,,=O.O V
v,,=20
v, v,,=o.o
v
V&O.0
V&O.0
V&8.0
V, l,,=lO.O mA
V, i&00.0
mA,
AVGs=l .O
V, 80 us
Puke
80
-
7
mS
PF
PF
pF
V, F-l.0 MHz
5
2.4
V,,=28.0 V, F-1 .OMHz
V,,=28.0 V, F=l .O MHz
V,,d8.0
V, I,,=50 mA, PO,+0
W, F=l .O GHz
W, F=l .OGHz
-
-
2O:l
dB
%
-
V,,=28.0 V, I,,=50 mA, P,s5.0
V,,=28.0 V, I,,=50 mA, P,&%O
W,
F=l .OGHz