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LET9130 Datasheet

  • LET9130

  • RF POWER TRANSISTORS Ldmos Enhanced Technology

  • 60.66KB

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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LET9130
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
IS-95 CDMA: 865-895 MHz / 28 V
P
OUT
= 25 W
EFF. = 29 %
鈥?/div>
EDGE: 920-960 MHz / 28 V
P
OUT
= 45 W
EFF. = 38 %
鈥?/div>
GSM: 920-960 MHz / 28 V
P
OUT
= 135 W
EFF. = 51 %
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
BeO FREE PACKAGE
鈥?/div>
INTERNAL INPUT MATCHING
鈥?/div>
ESD PROTECTION
1
ORDER CODE
LET9130
M265
epoxy sealed
BRANDING
LET9130
PIN CONNECTION
DESCRIPTION
The
LET9130
is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9130
is designed for high gain and
broadband performance operating in common
source mode at 28 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
2
3
1. Drain
2. Source
3. Gate
Unit
V
V
A
W
擄C
擄C
-0.5 to +15
15
217
200
-65 to +200
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.6
擄C/W
February, 6 2003
1/6

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