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LET9085 Datasheet

  • LET9085

  • RF POWER TRANSISTORS Ldmos Enhanced Technology

  • 4頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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LET9085
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
IS-95 CDMA PERFORMANCES
P
OUT
= 20 W
EFF. = 28 %
鈥?/div>
EDGE PERFORMANCES
P
OUT
= 35 W
EFF. = 35 %
鈥?/div>
GSM PERFORMANCES
P
OUT
= 75 W
EFF. = 55 %
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
BeO FREE PACKAGE
鈥?/div>
INTERNAL INPUT MATCHING
鈥?/div>
ESD PROTECTION
PIN CONNECTION
1
M265
epoxy sealed
ORDER CODE
LET9085
BRANDING
LET9085
DESCRIPTION
The
LET9085
is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9085
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
2
3
1. Drain
2. Source
3. Gate
Unit
V
V
A
W
擄C
擄C
-0.5 to +15
12
186
200
-65 to +150
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.7
擄C/W
January, 28 2003
1/4

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