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LET9060C Datasheet

  • LET9060C

  • RF POWER TRANSISTORS Ldmos Enhanced Technology

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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LET9060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL
MOSFETs
ENHANCEMENT-MODE
LATERAL
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 60 W WITH 17.3 dB gain @ 945 MHz
鈥?/div>
BeO FREE PACKAGE
鈥?/div>
HIGH GAIN
鈥?/div>
ESD PROTECTION
ORDER CODE
LET9060C
M243
epoxy sealed
BRANDING
LET9060C
DESCRIPTION
The LET9060C is an N-Channel enhancement-mode
lateral Field-Effect RF power transistor, designed for
high gain broadband, commercial and industrial
applications. It operates at 28 V in common source
mode at frequencies up to 1.0 GHz. LET9060C
boasts the excellent gain, linearity and reliability of the
ST latest LDMOS technology. Its superior
performances make it an ideal solution for base
station applications.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
7
118
200
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.1
擄C/W
1/5
November, 4 2002

LET9060C 產品屬性

  • LET9060C View All Specifications

  • 25

  • 分離式半導體產品

  • RF FET

  • -

  • LDMOS

  • 945MHz

  • 18dB

  • 28V

  • 12A

  • -

  • 400mA

  • 75W

  • 80V

  • M243

  • M243

  • 散裝

  • 497-12492LET9060C-ND

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