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LET9006 Datasheet

  • LET9006

  • RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Pa...

  • 4頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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LET9006
RF POWER TRANSISTORS
Ldmos Enhanced Technology
in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 6 W with 17 dB gain @ 960 MHz / 26V
鈥?/div>
NEW LEADLESS PLASTIC PACKAGE
鈥?/div>
ESD PROTECTION
鈥?/div>
SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLAT
鈩?/div>
(5x5)
ORDER CODE
LET9006
BRANDING
9006
DESCRIPTION
The LET9006 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9006 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT鈩?
It is ideal for digital cellular BTS applications
requiring high linearity.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
1
16
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
5
擄C/W
April, 15 2003
1/4

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