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LET9002 Datasheet

  • LET9002

  • RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Pa...

  • 4頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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LET9002
RF POWER TRANSISTORS
Ldmos Enhanced Technology
in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
鈥?/div>
EXCELLENT THERMAL STABILITY
鈥?/div>
COMMON SOURCE CONFIGURATION
鈥?/div>
P
OUT
= 2 W with 17 dB gain @ 960 MHz / 26 V
鈥?/div>
NEW LEADLESS PLASTIC PACKAGE
鈥?/div>
ESD PROTECTION
鈥?/div>
SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLAT
鈩?/div>
(5x5)
ORDER CODE
LET9002
BRANDING
9002
DESCRIPTION
The LET9002 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The LET9002 is designed for high gain and
broadband performance operating in common
source mode at 26 V. LET9002 boasts the
excellent gain, linearity and reliability of ST鈥檚 latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT鈩?
It is ideal for digital cellular BTS applications
requiring high linearity.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
0.25
4
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
20
擄C/W
April, 15 2003
1/4

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