LET8180 Datasheet

IC型號：
LET8180
PDF描述：
RF POWER TRANSISTORS Ldmos Enhanced Technology
文件大小：
36.69KB
PDF頁數(shù)：
4頁
芯片廠家：
STMICROELECTRONICS

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LET8180

RF POWER TRANSISTORS

Ldmos Enhanced Technology

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

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EXCELLENT THERMAL STABILITY

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COMMON SOURCE CONFIGURATION,

PUSH-PULL

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OUT

= 220 W with 17 dB TYP. gain @ 860 MHz

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BeO FREE PACKAGE

鈥?/div>

INTERNAL INPUT MATCHING

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ESD PROTECTION

ORDER CODE

LET8180

M252

epoxy sealed

BRANDING

LET8180

DESCRIPTION

The LET8180 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET8180 is designed for high gain and

broadband performance operating in common

source mode at 32 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1. Drain

2. Drain

3. Source

4. Gate

5. Gate

ABSOLUTE MAXIMUM RATINGS

CASE

= 25

擄

Symbol

(BR)DSS

DISS

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation (@ Tc =+70

擄C)

Max. Operating Junction Temperature

Storage Temperature

Parameter

Value

-0.5 to +15

289

200

-65 to +150

Unit

擄C

THERMAL DATA

th(j-c)

Junction -Case Thermal Resistance

0.45

擄C/W

January, 28 2003

1/4

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LET8180

英文版

RF POWER TRANSISTORS Ldmos Enhanced Technology

LET8180
LET8180

英文版

RF POWER TRANSISTORS Ldmos Enhanced Technology

STMICROELECTRON...

LET8180

LET8180 Datasheet

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