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ESD PROTECTION
CASE 465E鈥?3, STYLE 1
epoxy sealed
ORDER CODE
LET21030C
BRANDING
LET21030C
DESCRIPTION
The
LET21030C
is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.1
GHz. The
LET21030C
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
4
65
200
-65 to +200
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
2
擄C/W
January, 24 2003
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