鈩?/div>
(5x5)
ORDER CODE
LET21008
BRANDING
21008
DESCRIPTION
The LET21008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21008 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the innovative leadless
SMD
plastic
package,
PowerFLAT鈩?
LET21008鈥檚 superior linearity performance makes
it an ideal solution for base station applica-
tions.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70擄C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
2.0
TBD
150
-65 to +150
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
擄C/W
April, 15 2003
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