鈥?/div>
IS-97 CDMA PERFORMANCES
P
OUT
= 4.5 W
EFF = 17 %
PowerSO-10RF
(straight lead)
ORDER CODE
LET20030S
BRANDING
LET20030S
DESCRIPTION
The LET20030S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2 GHz. LET20030S boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. LET20030S鈥檚
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PIN CONNECTION
SOURCE
GATE
DRAIN
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
-0.5 to +15
TBD
140
165
-65 to +175
Unit
V
V
A
W
擄C
擄C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.0
擄C/W
1/4
February, 27 2003
STMICROELECTRONICS
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