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ESD PROTECTION
ORDER CODE
LET20030C
M243
epoxy sealed
BRANDING
LET20030C
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
擄
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
Tj
T
STG
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M鈩?
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
擄
C)
Max. Operating Junction Temperature
Storage Temperature
Parameter
Value
65
65
-0.5 to +15
4
65
200
-65 to +200
Unit
V
V
V
A
W
擄C
擄C
THERMAL DATA
(T
CASE
= 70
擄
C)
R
th(j-c)
Junction -Case Thermal Resistance
2.0
擄C/W
1/5
January, 24 2003