LET19060C Datasheet

IC型號(hào)：
LET19060C
PDF描述：
RF POWER TRANSISTORS Ldmos Enhanced Technology
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PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
STMICROELECTRONICS

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LET19060C

RF POWER TRANSISTORS

Ldmos Enhanced Technology

TARGET DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

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IS-97 CDMA PERFORMANCES

OUT

= 7.5 W

EFF. = 18 %

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EDGE PERFORMANCES

OUT

= 30 W

EFF. = 25 %

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GSM PERFORMANCES

OUT

= 65 W

EFF. = 45 %

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EXCELLENT THERMAL STABILITY

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BeO FREE PACKAGE

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INTERNAL INPUT/OUTPUT MATCHING

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ESD PROTECTION

PIN CONNECTION

M265

epoxy sealed

ORDER CODE

LET19060C

BRANDING

LET19060C

DESCRIPTION

The LET19060C is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET19060C is designed for high gain

and broadband performance operating in common

source mode at 26 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

1. Drain

2. Source

3. Gate

ABSOLUTE MAXIMUM RATINGS

CASE

= 25

擄

Symbol

(BR)DSS

DISS

STG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation (@ Tc = 70

擄C)

Max. Operating Junction Temperature

Storage Temperature

Parameter

Value

-0.5 to +15

130

200

-65 to +150

Unit

擄C

THERMAL DATA

th(j-c)

Junction -Case Thermal Resistance

1.0

擄C/W

January, 24 2003

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LET19060C

英文版

RF POWER TRANSISTORS Ldmos Enhanced Technology

LET19060C
LET19060C

英文版

RF POWER TRANSISTORS Ldmos Enhanced Technology

STMICROELECTRON...

LET19060C

LET19060C Datasheet

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