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Ordering number : EN*5468

CMOS LSI

LE28FV4001M, T, R-20/25

4MEG (52488

脳

8 Bits) Flash Memory

Preliminary

Overview

The LE28FV4001M, T, R Series are 4 MEG flash

memory products that feature a 542488-word

脳

8-bit

organization and 3.3 V single-voltage power supply

operation. CMOS peripheral circuits were adopted for

high speed, low power, and ease of use. The

LE28FV4001M also supports high-speed data rewriting

by providing a sector (256 bytes) erase function.

Package Dimensions

unit: mm

3205-SOP32

[LE28FV4001M. T, R]

Features

鈥?Highly reliable 2 layer polysilicon CMOS flash

EEPROM process

鈥?Read and write operations using a 3.3 V single-voltage

power supply

鈥?High-speed access: 200 and 250 ns

鈥?Low power

鈥?Operating (read): 10 mA (maximum)

鈥?Standby: 20 碌A(chǔ) (maximum)

鈥?Highly reliable read write

鈥擭umber of sector write cycles: 10

4

cycles

鈥?Data retention: 10 years

鈥?Address and data latches

鈥?Sector erase function: 256 bytes per sector

鈥?Self-timer erase/program

鈥?Byte program time: 35 碌s (maximum)

鈥?Write complete detection function: Toggle bit/Data

poling

鈥?Hardware and software data protection functions

鈥?Pin assignment conforms to the JEDEC byte-wide

EEPROM standard.

鈥?Package

SOP 32-pin (525 mil) plastic package: LE28FV4001M

TSOP 42-pin (10

脳

14 mm) plastic package:LE28FV4001T

TSOP 40-pin (10脳 14 mm) plastic package: LE28FV4001R

SANYO: SOP32

unit: mm

3087A-TSOP40

[LE28FV4001M. T, R]

SANYO: TSOP40 (TYPE-I)

These FLASH MEMORY products incorporate technology licensed from Silicon Storage Technology, Inc.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22897HA(OT) No. 5468-1/14

next

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