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Ordering number : EN*5239A

CMOS LSI

LE28F4001M, T, R-15/20

4 MEG (524288 words

脳

8 bits) Flash Memory

Preliminary

Overview

The LE28F4001 Series ICs are 524288-word

脳

8-bit flash

memory products that support on-board reprogramming

and feature 5 V single-voltage power supply operation.

CMOS peripheral circuits were adopted for high speed,

low power, and ease of use. These products support a

sector (256 bytes) erase function for fast data rewriting.

Package Dimensions

unit: mm

3205-SOP32

[LE28F4001M]

Features

鈥?Fabricated in a highly reliable 2-layer polysilicon

CMOS flash EEPROM process.

鈥?Read and write operation from a 5 V single-voltage

power supply

鈥?Sector erase function: 256 bytes per sector

鈥?Fast access time: 150/200 ns

鈥?Low power

鈥?Operating current (read): 25 mA (maximum)

鈥?Standby current: 20 碌A(chǔ) (maximum)

鈥?Highly reliable read and write operations

鈥?Sector write cycles: 10

4

cycles

鈥?Data retention time: 10 years

鈥?Address and data latches

鈥?Self-timer erase and programming

鈥?Byte programming time: 35 碌s (maximum)

鈥?Write complete detection: Toggle bit and data polling

鈥?Hardware and software data protection

鈥?Pin assignment conforms to the JEDEC byte-wide

EEPROM standard

鈥?Packages

SOP 32-pin (525 mil) plastic package

:LE28F4001M

TSOP 40-pin (10

脳

14 mm) plastic package :LE28F4001T

TSOP 40-pin (10

脳

14 mm) plastic package :LE28F4001R

SANYO: SOP32

unit: mm

3087A-TSOP40

[LE28F4001T, R]

SANYO: TSOP40 (TYPE-I)

These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

63096HA (OT) No. 5239-1/14

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