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LE28DW8102T Datasheet

  • LE28DW8102T

  • 8 Megabit FlashBank Memory LE28DW8102T

  • 337.34KB

  • 19頁

  • SANYO

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8 Megabit FlashBank Memory
LE28DW8102T
FEATURES:
鈥?Single 3.0-Volt Read and Write Operations
1
Sp
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ifi
ca
tio
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1
鈥?Separate Memory Banks by Address Space
鈥?Simultaneous Read and Write Capability
鈥?Superior Reliability
鈥?Endurance: 10,000 Cycles
鈥?Data Retention: 10 years
鈥?Low Power Consumption
鈥?Active Current, Read:
10 mA (typical)
鈥?Active Current,
Read & Write:
30 mA (typical)
鈥?Standby Current:
5碌A(chǔ) (typical)
鈥?Auto Low Power Mode Current:
5碌A(chǔ) (typical)
Read Access Time
鈥?80/90 ns
Latched Address and Data
End of Write Detection
鈥?Toggle Bit
鈥?Data # Polling
Flash Bank:
Two Small Erase Element Sizes
鈥?/div>
1K Words per Sector or 32K Words per Block
鈥?Erase either element before Word Program
CMOS I/O Compatibility
Packages Available
鈥?48-Pin TSOP
Continuous Hardware and Software Data
Protection (SDP)
鈥?Fast Write Operation
鈥?/div>
Bank Erase + Program:
4.5 sec (typical)
鈥?/div>
Block Erase + Program:
500 ms (typical)
鈥?/div>
Sector Erase + Program:
30 ms (typical
)
鈥?Fixed Erase, Program, Write Times
鈥?Does not change after cycling
Product Description
Pr
el
im
in
ar
y
The LE28DW8102T consists of two memory banks, 2 each
256K x 16 bits sector mode flash EEPROM manufactured with
SANYO's proprietary, high performance FlashTechnology.
The LE28DW8102T writes with a 3.0-volt-only power supply.
The LE28DW8102T is divided into two separate memory
banks, 2 each 512K x 16 Flash banks. Each Flash bank is
typically used for program code storage and contains 256
sectors, each of 1K words or 8 blocks, each of 32K words. The
Flash banks may also be used to store data.
Any bank may be used for executing code while writing data
to a different bank. Each memory bank is controlled by separate
Bank selection address (A18) lines.
The LE28DW8102T inherently uses less energy during Erase,
and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, current,
and time of application. Since for any given voltage range, the
Flash technology uses less current to program and has a
shorter Erase time, the total energy consumed during any Erase
or Program operation is less than alternative flash technolo-
gies. The Auto Low Power mode automatically reduces the
active read current to approximately the same as standby; thus,
providing an average read current of approximately 1 mA/MHz
of Read cycle time.
The Flash technology provides fixed Erase and Program times,
independent of the number of erase/program cycles that have
occurred. Therefore the system software or hardware does not
have to be modified or de-rated as is necessary with alternative
flash technologies, whose Erase and Program times increase
with accumulated erase/program cycles.
Device Operation
The LE28DW8102T operates as two independent 4Megabit
Word Pogram, Sector Erase flash EEPROMs.
All memory banks share common address lines, I/O lines,
WE#, and OE#. Memory bank selection is by bank select
address. WE# is used with SDP to control the Erase and
Program operation in each memory bank.
The LE28DW8102T provides the added functionality of
being able to simultaneously read from one memory bank
while erasing, or programming to one other memory bank.
Once the internally controlled Erase or Program cycle in a
memory bank has commenced, a different memory bank can
be accessed for read. Also, once WE# and CE# are high
during the SDP load sequence, a different bank may be
accessed to read. LE28DW8102T which selectes a bank by
a address. It can be used as a normal conventinal flash
memory when operats erase or program operation to only a
bank at non-concurrent operation.
The device ID cannot be accessed while any bank is writing,
erasing, or programming.
The
Auto Low Power Mode
automatically puts the
LE28DW8102T in a near standby mode after data has been
accessed with a valid Read operation. This reduces the I
DD
active read current from typically 10mA to typically 5碌A(chǔ).
The Auto Low Power mode reduces the typical I
DD
active
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
The Flash Bank product family was jointly developed by SANYO and Sillicon Storage Technology,Inc.(SST),under SST's technology license. This preliminary specification is subject to change without notice.
R.1.01(2/15/2000) No.xxxx-1/19

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