Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words
脳
8 bits) Flash Memory
Preliminary
Overview
The LE28C1001M, T series ICs are 1 MEG flash memory
products that feature a 131072-word
脳
8-bit organization
and 5 V single-voltage power supply operation. CMOS
peripheral circuits are adopted for high speed, low power
dissipation, and ease of use. A 128-byte page rewrite
function provides rapid data rewriting.
Package Dimensions
unit: mm
3205-SOP32
[LE28C1001M]
Features
鈥?Highly reliable 2-layer polysilicon CMOS flash
EEPROM process
鈥?Read and write operations using a 5 V single-voltage
power supply
鈥?Fast access time: 90, 120, and 150 ns
鈥?Low power dissipation
鈥?Operating current (read): 30 mA (maximum)
鈥?Standby current:
20 碌A(chǔ) (maximum)
鈥?Highly reliable read/write
鈥?Erase/write cycles:
10
4
/10
3
cycles
鈥?Data retention:
10 years
鈥?Address and data latches
鈥?Fast page rewrite operation
鈥?128 bytes per page
鈥?Byte/page rewrite time: 5 ms (typical)
鈥?Chip rewrite time:
5 s (typical)
鈥?Automatic rewriting using internally generated Vpp
鈥?Rewrite complete detection function
鈥?Toggle bit
鈥?Data polling
鈥?Hardware and software data protection functions
鈥?All inputs and outputs are TTL compatible.
鈥?Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
鈥?Package
SOP 32-pin (525 mil) plastic package : LE28C1001M
TSOP 32-pin (8
脳
20 mm)plastic package : LE28C1001T
SANYO: SOP32
unit: mm
3224-TSOP32
[LE28C1001T]
SANYO: TSOP32 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
D3096HA (OT)/N3095HA (OT) No. 5129-1/14