PWRLITE LD1010D
High Performance N-Channel
P
OWERJFET
TM
with PN Diodes
Features
Trench Power JFET with low threshold voltage Vth.
Device fully 鈥淥N鈥?with Vgs = 0.7V
Optimum for 鈥淟ow Side鈥?Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No 鈥淏ody Diode鈥? extremely low Cds
Added Fast Recovery Schottky Diode in same package
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor 鈥淣o Body
Diode鈥?provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
D
G
D
G
S
S
N 鈥?Channel Power JFET
with PN Diode
Pin Definitions
Pin Number
1
2
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate.
Transistor Gate
Drain.
Transistor Drain
Source.
Transistor Source
V
DS
(V)
24V
Product Summary
Rdson (鈩?
0.0045
I
D
(A)
50
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25擄C
(V
DD
= 5V
DC
, IL=60A
PK
, L=0.3mH, R
G
=100
鈩?
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25擄C)
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
T
J
T
STG
T
P
D
Ratings
24
-10
-28
50
100
220
-55 to 150擄C
-65 to 150擄C
260擄C
80
Units
V
V
V
A
A
mJ
擄C
擄C
擄C
W
LD1010D.Rev 1.2 12-04
1
2
3
4
5
