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LC322271J Datasheet

  • LC322271J

  • 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Wri...

  • 29頁

  • SANYO

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Ordering number : EN*5085A
CMOS LSI
LC322271J, M, T-70/80
2 MEG (131072 words
脳
16 bits) DRAM
Fast Page Mode, Byte Write
Preliminary
Overview
The LC322271J, M and T is a CMOS dynamic RAM
operating on a single 5 V power source and having a
131072 words
脳
16 bits configuration. Equipped with
large capacity capabilities, high speed transfer rates and
low power dissipation, this series is suited for a wide
variety of applications ranging from computer main
memory and expansion memory to commercial
equipment.
Address input utilizes a multiplexed address bus which
permits it to be enclosed in a compact plastic package of
SOJ 40-pin, SOP 40-pin, and TSOP 44-pin . Refresh rates
are within 8 ms with 512 row address (A0 to A7, A8R)
selection and support Row Address Strobe (RAS)-only
refresh, Column Address Strobe (CAS)-before-RAS
refresh and hidden refresh settings. There are functions
such as fast page mode, read-modify-write and byte write.
The pin assignment follows the JEDEC 1 M DRAM
(65536 words
脳
16 bits, 1CAS/2WE) standard.
鈥?Package:
SOJ 40-pin (400 mil) plastic package : LC322271J
SOP 40-pin (450 mil) plastic package: LC322271M
TSOP 44-pin (400 mil) plastic package : LC322271T
Package Dimensions
unit: mm
3200-SOJ40
[LC322271J]
Features
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131072 words
脳
16 bits configuration.
Single 5 V 鹵 10% power supply.
All input and output (I/O) TTL compatible.
Supports fast page mode, read-modify-write and byte
write.
Supports output buffer control using early write and
Output Enable (OE) control.
8 ms refresh using 512 refresh cycles.
Supports RAS-only refresh, CAS-before-RAS refresh
and hidden refresh.
Follows the JEDEC 1 M DRAM (65536 words
脳
16
bits, 1CAS/2WE) standard.
RAS access time/column address time/CAS access
time/cycle time/power dissipation
LC322271J, M, T
-70
RAS access time
Column address access time
CAS access time
Cycle time
Power dissipation (max.)
During operation
During standby
70 ns
35 ns
20 ns
130 ns
688 mW
-80
80 ns
45 ns
30 ns
150 ns
633 mW
SANYO: SOJ40
Parameter
5.5 mW (CMOS level)/11 mW (TTL level)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN
32896HA (OT)/33195TH (OT) No. 5085-1/29

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