鈥?/div>
Pb-Free Package is available.
3 Drain
LBSS84WT1G
3
1
2
SOT 鈥?23
1
Gate
-
Marking Diagram
2
Source
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(Note 3.) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
胃JA
T
J,
T
stg
417
鈥?5 to
+150
擄C/W
擄C
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
PD
W
W = Work Week
R
胃JA
P
D
ORDERING INFORMATION
Device
Package
Shipping
SOT-323 3000/Tape&Reel
SOT-323 10000/Tape&Reel
LBSS84WT1G
LBSS84WT1G
MAXIMUM RATINGS
(T
J
= 25
擄
C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current
鈥?Continuous @ T
A
= 25擄C
鈥?Pulsed Drain Current (t
p
鈮?/div>
10
碌s)
Total Power Dissipation @ T
A
= 25擄C
Operating and Storage Temperature
Range
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
胃JA
T
L
Value
50
鹵
20
130
520
225
鈥?55 to
150
556
260
mW
擄C
擄C/W
擄C
Unit
V
dc
V
dc
mA
1/4
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