LESHAN RADIO COMPANY, LTD.
Dual Series Switching Diode
1
ANODE
3
CAHODE/ANODE
2
CATHODE
LBAV99LT1
3
1
2
DEVICE MARKING
LBAV99LT1 = A7
SOT鈥?3
Symbol
V
R
I
F
I
FM(surge)
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non鈥揜epetitive Peak Forward Current
t = 1.0
碌
s
t = 1.0 ms
t = 1.0 S
Value
70
215
500
70
715
450
2.0
1.0
0.5
Characteristic
Total Device Dissipation
FR鈥? Board, (1) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
V
RRM
I
F(AV)
I
FRM
I
FSM
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
Min
70
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t
rr
V
FR
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Max
鈥?/div>
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
ns
V
Unit
Vdc
碌A(chǔ)dc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
碌A(chǔ))
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150擄C)
(V
R
= 70 Vdc, T
J
= 150擄C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100鈩?) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
C
D
V
F
pF
mVdc
LBAV99LT1鈥?/3
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