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LA733P

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current 鈥?Continuous

Total Device Dissipation

@ T

A

= 25擄C

Derate above 25擄C

Total Device Dissipation

@ T

C

= 25擄C

Derate above 25擄C

Operating and Storage Junction

Temperature Range

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

625

5.0

P

D

1.5

12

T

J

, T

stg

鈥?5 to +150

Watts

mW/擄C

擄C

mW

mW/擄C

Value

鈥?8

鈥?0

鈥?.0

鈥?00

Unit

Vdc

Vdc

Vdc

mAdc

http://onsemi.com

COLLECTOR

2

3

BASE

1

EMITTER

1

2

3

TO鈥?2

CASE 29

STYLE 14

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction to Ambient

Thermal Resistance,

Junction to Case

Symbol

R

qJA

R

qJC

Max

200

83.3

Unit

擄C/W

擄C/W

MARKING DIAGRAM

LA

733x

YWW

LA733x

x

Y

WW

= Specific Device Code

=P

= Year

= Work Week

ORDERING INFORMATION

Device

LA733P

Package

TO鈥?2

Shipping

5000 Units/Box

漏

Semiconductor Components Industries, LLC, 2002

1

June, 2002 鈥?Rev. 2

Publication Order Number:

LA733P/D

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