PRELIMINARY DATA
HIGH POWER QUASI-CW
LASER DIODE L8411
High power Quasi-CW operation
FEATURES
High optical power : 50 to 100W/bar in average
High stability
Long life
High cost performance
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Medical systems
Our high power Quasi-CW laser diode, L8411, features several advantages such as high stability with long life, high
cost performance with compact structure, and higher peak intensity. It can be applied as light source to pump solid
state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas consist of
small laser emitters arranged in line and are thus called 鈥淏ar鈥?structure. A high Quasi-CW output power as high as
10kW at peak was achieved by stacking ten Bars. Cooling methods can be selected from Peltier-cooling, water-cooling
and Funryu-cooling (patent pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens
and a driving electronics are optionally available.
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Radiant Output Power / bar
Reverse Voltage
Pulse Duration
Duty Ratio
Operating Temperature
Storage Temperature
Symbol
Low Duty Ratio Type
105
2.0
200
1
+15 to +35
-20 to +40
High Duty Ratio Type
55
2.0
200
20
蠁
e
V
R
Tw
D
R
T
op
T
stg
Unit
W
V
碌
sec
藲c
藲c
%
CHARACTERISTICS (Each bar, Ta=20藲
c
)
Parameter
Radiant Output Power / bar
Forward Current
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Array Length
Maximum Number of Stacks
Symbol
Low Duty Ratio Type
Conditions
Value
100
120
808
4
2.0
10
35
25
10
25
High Duty Ratio Type
Conditions
Value
50
Unit
W
A
nm
nm
V
蠁
e
I
F
位
p
鈭?/div>
位
V
F
蠁
e
=100W
蠁
e
=100W
蠁
e
=100W
蠁
e
=100W
FWHM
蠁
e
=50W
蠁
e
=50W
蠁
e
=50W
蠁
e
=50W
FWHM
80
808
5
1.9
10
35
20
10
6
胃
//
胃
鈯?/div>
Ith
-
-
藲
(degree)
藲
(degree)
A
mm
stack
*Contact sales stuff for emitting wave-length and radiant output power (
蠁
e
) other than above.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏2000 Hamamatsu Photonics K.K.
1
2
