= 3.8 m鈩?/div>
4
1
2
1
5
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
T
C
= 25擄C
T
C
= 90擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
55
鹵20
150
110
V
V
A
A
Features
鈥?trench MOSFET
- very low on state resistance R
DSon
- fast switching
鈥?Schottky diode
- low forward voltage
- extremely fast switching
- blocking capability optimized for
elevated temperature
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
鈥?automotive
- choppers - replacing series resistors
for DC drives, heating etc.
- control of SR drives
- DC-DC converters
- electronic switches -replacing relays
and fuses
鈥?power supplies
- DC-DC converters
- solar inverters
鈥?battery supplied systems
- choppers for drives in hand held tools
- battery chargers
Symbol
Conditions
(T
VJ
Characteristic Values
= 25擄C, unless otherwise specified)
min.
typ. max.
3.8
2
0.1
0.2
86
18
25
25
50
70
40
1.5
4.9 m鈩?/div>
4
1
V
碌A(chǔ)
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
1 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 1 mA
V
DS
= 55V; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 44 V; I
D
= 25 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 25A; R
G
= 10
鈩?/div>
with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
406
1
2
