鈶?/div>
I
dAVM
I
FSM
Conditions
T
C
= 85擄C, module
T
VJ
= 45擄C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
130
130
600
640
520
555
1800
1720
1350
1295
-40...+150
150
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
擄C
擄C
擄C
V~
V~
Features
鈥?Package with DCB ceramic
base plate in low profile
鈥?Isolation voltage 3000 V~
鈥?Planar passivated chips
鈥?Low forward voltage drop
鈥?Leads suitable for PC board soldering
Applications
鈥?Supplies for DC power equipment
鈥?Input and output rectifiers for high
frequency
鈥?Battery DC power supplies
鈥?Field supply for DC motors
Advantages
鈥?Space and weight savings
鈥?Improved temperature and power
cycling capability
鈥?Small and light weight
鈥?Low noise switching
Dimensions in mm (1 mm = 0.0394")
I
2
t
T
VJ
= 45擄C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thCH
I
RM
t
rr
a
d
S
d
A
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M4)
typ.
Conditions
V
R
= V
RRM
V
R
= V
RRM
I
F
= 60 A
T
VJ
= 25擄C
T
VJ
= T
VJM
T
VJ
= 25擄C
1.5-2/14-18
Nm/lb.in.
24
g
Characteristic Values
typ.
max.
0.1
2.5
2.04
mA
mA
V
for power-loss calculations only
per diode; DC current
per diode, DC current, typ.
I
F
= 130 A, -diF/dt = 100 A/碌s
V
R
= 100 V, T
VJ
= 100擄C
I
F
= 1 A; -di/dt = 300 A/碌s; V
R
= 30 V, T
VJ
= 25擄C
Max. allowable acceleration
creeping distance on surface (pin to heatsisnk)
strike distance in air
(pin to heatsisnk)
1.09
V
4.3 m鈩?/div>
0.8 K/W
0.2 K/W
6.8
35
50
11.2
9.7
A
ns
m/s
2
mm
mm
Data according to IEC 60747 refer to a single diode unless otherwise stated
鈶?/div>
for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2002 IXYS All rights reserved
1-2
241
1
2
