HTZ110A Series
I
F(AV)
= 3.5 A
V
RRM
= 25000 V
High Voltage
Diode Rectifier
Module
Minimum
Avalanche
Voltage
V
(BR)R
27200
24000
20800
17600
-V
R R M
-
LARONTROL
Electronic Devices
Type
Number
HTZ110A25K
HTZ110A22K
HTZ110A19K
HTZ110A16K
CIRCUIT DIAGRAM
Repetitive
Peak
25000
22000
19000
16000
+
_
C e n tre T a p
CURRENT RATINGS - AIR COOLED
I
F(AV)
Mean forward current
I
F
Continuous (direct) forward current
R
th(j-a)
Thermal resistance junction to ambient
CURRENT RATINGS - OIL COOLED
I
F(AV)
Mean forward current
I
T
Continuous (direct) forward current
R
th(j-o)
Thermal resistance junction to oil
SURGE RATINGS
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
TEMPERATURE AND FREQUENCY RATINGS
T
vj
Virtual junction temperature
T
stg
f
Storage temperature range
Frequency range
Half wave resistive load T
amb
= 35潞C
T
amb
= 35潞C
3.5
A
4.3
A
2.3 潞C/W
5.7
A
7.0
A
0.93 潞C/W
200 A
2
sec
200
A
180
180
-40 to 100
20 to 400
max 18.3
max 0.5
潞C
潞C
潞C
Hz
V
mA
Half wave resistive load T
oil
= 60潞C
T
oil
= 60潞C
10 ms half sine T
vj
= 150潞C
T
vj
= 150潞C
Forward (conducting)
Reverse (blocking)
CHARACTERISTICS
T
case
= 25潞C unless otherwise stated
V
FM
Forward voltage
At 12 Amps peak
I
RM
Peak reverse current
At V
RRM
; T
case
= 150擄C
Dimensioned Outlines
Dimensions shown are maximum in mm
300
150
150
48
Weight typ.: 1,55 Kg
6.8 DIA
BOTH ENDS
348
TAPPED M6, 3 OFF
48
IXYS reserves the right to change limits, test conditions and dimensions.
368
ZA
Issue 1 June 1998
Distributed by
USA
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Phone: (408) 982-0700
FAX: (408) 496-0670
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
www.IXYS.com