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L468 Datasheet

  • L468

  • Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM

  • 2頁(yè)

  • IXYS   IXYS

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Advanced Technical Information
Dual HiPerFRED
TM
Epitaxial Diode
in ISOPLUS i4-PAC
TM
DSEE 55-24N1F
V
RRM
= 2400 V
I
F(AV)M
= 55 A
t
rr
= 220 ns
1
3
1
3
5
Rectifier Bridge
Symbol
V
RRM
V
RRM
I
FAV
I
F(AV)M
I
FSM
E
AS
P
tot
T
C
= 90擄C; sine 180擄
T
C
= 90擄C; d = 0.5 rectangular
T
VJ
= 25擄C; t = 10 ms; sine 50 Hz
I
AS
= 16 A; L
AS
= 180 碌H; T
C
= 25擄C; non repetitive
T
C
= 25擄C
(per diode)
Conditions
Maximum Ratings
2400
1200
53
55
500
28
200
V
V
A
A
A
mJ
W
Features
5
鈥?HiPerFRED
TM
Epitaxial Diodes
- fast and soft reverse recovery 鈥?/div>
low switching losses
- avalanche rated
- low leakage current
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- enlarged creepage between pins
- application friendly pinout
- high reliability
- industry standard outline
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.0
1.5
1
79
220
2.5
1
V
V
mA
mA
A
ns
0.63 K/W
Applications
鈥?rectifiers
- high frequency rectifiers, output
rectifiers of switched mode power
supplies
- mains rectifiers with minimized
emission of disturbances
鈥?diodes in snubber networks
鈥?high voltage diodes using the series
connection in the component
V
F
I
R
I
RM
t
rr
R
thJC
I
F
= 40 A; T
VJ
= 25擄C
T
VJ
= 125擄C
V
R
= V
RRM
; T
VJ
= 25擄C
T
VJ
= 125擄C
I
F
= 75 A; di
F
/dt = -750 A/碌s; T
VJ
= 125擄C
V
R
= 600 V
(per diode)
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Diodes connected in series
漏 2001 IXYS All rights reserved
1-2
117
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.

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  • 英文版
    Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM
    IXYS
  • 英文版
    Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM
    IXYS [IXYS...

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