SEMICONDUCTOR
TECHNICAL DATA
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX511T consists of two chips which are equivalent to the
KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
E
K
1
B
K
6
Ultrasmall-sized package permiting applied sets to be made small
and slim (mounting height 0.7 ).
A
F
KTA1532T and the KDR701S, respectively.
2
5
DIM
A
B
C
D
E
D
F
G
H
I
J
K
L
3
4
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
EQUIVALENT CIRCUIT (TOP VIEW)
C
J
I
6
5
4
Marking
6
5
4
L
G
G
J
H
Lot No.
Q1
D1
Type Name
DA
1
2
3
1. Q
1
EMITTER
2. Q
1
BASE
3. D
1
ANODE
4. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
5. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
6. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
1
2
3
TS6
MAXIMUM RATING (Ta=25
Transistor Q
1
)
SYMBOL
V
CBO
V
CEO
V
EBO
DC
Pulse
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
)
RATING
-20
-20
-5
-1.5
-3
-300
0.9
150
-55
150
UNIT
V
V
V
A
A
mA
W
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
Diode (SBD) D
1
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
V
R
I
O
I
FSM
T
j
T
stg
RATING
30
30
0.7
5
125
-55
150
UNIT
V
V
A
A
2002. 1. 24
Revision No : 1
1/5