SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
A
KTX403U
EPITAXIAL PLANAR NPN TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
B
B1
1
5
2
3
4
D
DIM
A
A1
B
B1
C
D
G
H
T
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
T
G
MILLIMETERS
_
2.00 + 0.20
_
+ 0.1
1.3
_
2.1 + 0.1
_
1.25+ 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
Marking
5
Type Name
4
1. D
1
2. Q
1
3. Q
1
4. Q
1
5. D
1
H
C
A1
C
D1
Q1
CK
1
2
3
ANODE
BASE
EMITTER
COLLECTOR
CATHODE
1
2
3
USV
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
j
T
stg
RATING
15
12
6
500
1
100
150
-55~125
A
UNIT
V
V
DIODE (SBD) D
1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
T
j
T
stg
RATING
30
30
300
200
1
125
-55 125
A
UNIT
V
V
2003. 3. 11
Revision No : 2
1/4
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2
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