SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
KTX401U
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
B
B1
1
5
2
3
4
D
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
+ 0.1
1.3
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
A1
C
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
5
4
Type Name
5
4
A
C
H
T
G
T
D1
Q1
CD
1
2
3
1
2
3
1. D
1
2. Q
1
3. Q
1
4. Q
1
5. D
1
ANODE
EMITTER
BASE
COLLECTOR
CATHODE
MARK SPEC
Type
Mark
KTX401U
Q
1
h
FE
Rank : Y
CD
KTX401U
Q
1
h
FE
Rank : GR
CE
USV
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE D
1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
50
5
150
30
100
150
-55~150
UNIT
V
V
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300
100
2
-
150
-55
150
UNIT
V
V
A
2002. 1. 24
Revision No : 3
1/2
1
2
