SEMICONDUCTOR
TECHNICAL DATA
POWER MANAGEMENT.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
KTX321U
EPITAXIAL PLANAR PNP TRANSISTOR
N CHANNEL MOS FIELD EFFECT TRANSISTOR
B
B1
1
6
5
4
D
C
Reduce a quantity of parts and manufacturing process.
2
3
DIM
A
A1
B
B1
C
D
G
H
MILLIMETERS
_
2.00 + 0.20
_
1.3 + 0.1
_
2.1 + 0.1
_
1.25 + 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 + 0.1
0.15+0.1/-0.05
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
A1
H
MARKING
6
5
A
C
Type Name
4
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
G
T
T
Q2
Q1
BR
2
3
1
2
3
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
1
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
US6
Q
1
MAXIMUM RATING (Ta=25
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP *
P
C *
T
j
T
stg
RATING
-15
-12
-6
-500
-1
150
150
-55 150
UNIT
V
V
V
mA
A
mW
CHARACTERISTIC
* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Q
2
MAXIMUM RATING (Ta=25
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
)
SYMBOL
V
DS
V
GSS
I
D
P
C **
T
ch
T
stg
RATING
30
20
100
150
150
-55 150
UNIT
V
V
mA
mW
CHARACTERISTIC
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
2003. 11. 20
Revision No : 0
1/6