SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5
High Speed.
Small Package.
Enhancement-Mode.
KTK5164S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
L
E
B
L
DIM
A
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
1.5V.
2
3
D
B
C
D
E
G
H
J
K
A
G
H
1
P
P
L
M
N
P
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
60
20
200
200
150
-55 150
V
V
mA
mW
1. SOURCE
2. GATE
3. DRAIN
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
EQUIVALENT CIRCUIT
D
Marking
G
J
MAXIMUM RATINGS (Ta=25
)
C
N
Lot No.
Type Name
S
KM
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
SYMBOL
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
V
GS
=
TEST CONDITION
16V, V
DS
=0V
I
D
=100 A, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=1mA
V
DS
=10V, I
D
=50mA
I
D
=50mA, V
GS
=2.5V
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, V
GS
=0V, f=1MHz
10V
0
10碌s
V
IN
50鈩?/div>
R
L
I
D
=100mA
V
OUT
MIN.
-
60
-
0.5
100
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
1.5
55
13
40
8
14
35
75
MAX.
1
-
1
1.5
-
2
65
18
50
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
V
IN
:t
r
, t
f
< 5ns
D.U. < 1% (Z
OUT
=50鈩?
=
V
DD
= 30V
2002. 10. 17
Revision No : 1
1/3
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