SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
High Forward Transfer Admittance.
A
KTK211
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
L
E
B
L
Extremely Low Reverse Transfer Capacitance.
: C
rss
=0.1pF(Typ.)
G
: |y
fs
| =9mS(Typ.)
2
H
3
1
P
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Gate-Drain Voltage
Gate Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
GDO
I
G
P
D
T
j
T
stg
RATING
-18
10
150
150
-55 150
UNIT
V
mA
mW
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
M
1. GATE
2. DRAIN
3. SOURCE
SOT-23
Marking
I
DSS
Rank
Type Name
Lot No.
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Note : I
DSS
Classification
SYMBOL
I
GSS
V
(BR)GDO
I
DSS
(Note)
V
GS(OFF)
|y
fs
|
C
rss
G
PS
NF
TEST CONDITION
V
GS
=-0.5V, V
DS
=0
I
G
=-100 A
V
GS
=0, V
DS
=10V
V
DS
=10V, I
D
=1 A
V
DS
=10V, V
GS
=0, f=1kHz
V
GD
=-10V, f=1MHz
V
DD
=10V, f=100MHz (Fig.)
V
DD
=10V, f=100MHz (Fig.)
MIN.
-
-18
1.0
-0.4
-
-
-
-
TYP.
-
-
-
-
9
0.10
18
2.5
MAX.
-10
-
15
-4.0
-
0.15
-
3.5
UNIT
nA
V
mA
V
mS
pF
dB
dB
O:1.0 3.0, Y:2.5 6.0,
GR(G):5.0 10.0, BL(B):9.0 15.0
2003. 2. 25
Revision No : 2
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