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SEMICONDUCTOR

TECHNICAL DATA

HIGH FREQUENCY APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

KTK161

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

B

FEATURES

Low Noise Figure.

High Forward Transfer Admittance.

:|y

fs

|= 9mS(Typ.).

Extremely Low Reverse Transfer Capacitance.

: C

rss

=0.1pF(Typ.)

C

H

M

F

: NF=2.5dB(Typ.) (f=100MHz).

A

O

E

E

MAXIMUM RATINGS (Ta=25

CHARACTERISTIC

Gate-Drain Voltage

Gate-Current

Drain Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

GDO

I

G

P

D

T

j

T

stg

RATING

-18

10

400

150

-55

150

UNIT

V

mA

mW

1

L

2

3

N

DIM MILLIMETERS

A

3.20 MAX

B

4.30 MAX

C

0.55 MAX

_

D

2.40 + 0.15

E

1.27

F

2.30

_

G

14.00+ 0.50

H

0.60 MAX

J

1.05

K

1.45

L

25

M

0.80

N

0.55 MAX

O

0.75

J

1. DRAIN

2. SOURCE

3. GATE

K

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Gate Leakage Current

Gate-Drain Breakdown Voltage

Drain Current

Gate-Source Cut-off Voltage

Foward Transfer Admittance

Reverse Transfer Capacitance

Power Gain

Noise Figure

Note : I

DSS

Classification

O:1.0 3.0,

Y:2.5

SYMBOL

I

GSS

V

(BR)GDO

I

DSS

(Note)

V

GS(OFF)

|y

fs

|

C

rss

G

ps

NF

6.0,

TEST CONDITION

V

GS

=-0.5V, V

DS

=0

I

G

=-100 A

V

DS

=10V, V

GS

=0V

V

DS

=10V, I

D

=1 A

V

DS

=10V, V

GS

=0, f=1kHz

V

GD

=-10V, f=1MHz

V

DD

=10V, f=100MHz (Fig.)

V

DD

=10V, f=100MHz (Fig.)

GR:5.0 10.0,

BL:9.0 15.0

MIN.

-

-18

1.0

-0.4

-

-

-

-

TYP.

-

-

-

-

9.0

0.10

18

2.5

MAX.

-10

-

15.0

-4.0

-

0.15

-

3.5

UNIT

nA

V

mA

V

mS

pF

dB

dB

1995. 1. 24

Revision No : 0

D

G

TO-92M

1/3

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