SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
B
KTD545
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: V
CE(sat)
=0.3V(Max.) at I
C
=0.5A.
Complementary to KTB598.
K
D
E
G
N
A
Low Saturation Voltage
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
30
25
5
1
625
150
-55
150
UNIT
F
H
F
V
L
V
V
A
mW
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
O:70 140,
Y:120
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
240,
TEST CONDITION
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=1A(Pulse)
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
GR:200 400
MIN.
-
-
70
30
-
-
-
-
TYP.
-
-
-
-
0.1
0.85
180
15
MAX.
0.1
0.1
400
-
0.3
1.2
-
-
V
V
MHz
pF
UNIT
A
A
1999. 8. 7
Revision No : 1
1/2
1
2
