SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
B
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
Complementary to KTB1772.
K
D
E
G
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Pulse Width
DC
Pulse (Note)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
40
30
5
3
7
0.6
625
150
-55
150
UNIT
V
V
M
H
F
F
V
A
A
mW
L
1
2
3
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
10mS, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain
*
*
*
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2) (Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
O:100 200 , Y:160
TEST CONDITION
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2V, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
320 , GR:200 400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
150
160
0.3
1.0
90
45
MAX.
1
1
-
400
0.5
2.0
-
-
V
V
MHz
pF
UNIT
A
A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Note: h
FE
(2) Classification
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
2000. 12. 8
Revision No : 0
1/2
1
2
