SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTB1234T.
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
DIM
A
B
G
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
A
F
D
1
E
F
G
H
I
J
K
L
C
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
*
T
j
T
stg
0.8
RATING
80
50
10
200
400
0.9
150
-55 150
)
UNIT
V
V
V
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
Marking
EQUIVALENT CIRCUIT
COLLECTOR
Type Name
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
C
=10 A, I
C
=0
V
CE
=2V, I
C
=10mA
V
CE
=2V, I
C
=100mA
I
C
=100mA, I
B
=100 A
I
C
=100mA, I
B
=100 A
MIN.
-
-
80
50
10
5000
4000
-
-
-
-
0.9
1.5
-
-
1.5
2.0
V
V
TYP.
-
-
MAX.
100
100
UNIT
nA
nA
V
V
V
2001. 10. 23
Revision No : 0
I
MAXIMUM RATINGS (Ta=25
)
L
G
H
J
TSM
Lot No.
LY
1/2
1
2
