SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E
M
B
M
2
D
3
DIM
A
B
C
D
E
G
H
J
K
L
M
N
1
MILLIMETERS
_
2.00 + 0.20
_
1.25 + 0.15
_
0.90 + 0.10
0.3+0.10/-0.05
_
2.10 + 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
0.42 + 0.10
0.10 MIN
A
J
C
G
H
N
K
N
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
50
40
15
50
100
100
150
-55 150
UNIT
V
V
V
1. EMITTER
2. BASE
3. COLLECTOR
L
USM
mA
mW
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Marking
Type Name
h
FE
Rank
L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Note : h
FE
Classification
A:400~800,
SYMBOL
I
CBO
I
CEO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(Note)
V
CE(sat)
f
T
B:600~1200,
TEST CONDITION
V
CB
=20V, I
E
=0
V
CE
=20V, I
B
=0
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CE
=10V, I
C
=2mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=-2mA, f=200MHz
C:1000~2000
MIN.
-
-
50
40
15
400
-
-
1000
0.05
120
2000
0.2
-
V
MHz
TYP.
-
-
MAX.
100
1
UNIT
nA
A
V
V
V
2001. 11. 29
Revision No : 1
1/3
1
2
3
