SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
C
KTD1691
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
D
E
F
FEATURES
High Power Dissipation : P
C
=1.5W(Ta=25 )
Complementary to KTB1151.
H
J
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
* PW
10ms, Duty Cycle
50%
Ta=25
Tc=25
DC
Pulse *
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
60
60
7
5
8
1
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
N
K
L
M
O
1
2
3
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
桅3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
I
CBO
I
EBO
h
1
DC Current Gain
*
h
FE
2 (Note)
h
FE
3
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Turn On Time
Switching
Time
Storage Time
Fall Time
* Pulse test : PW
50 S, Duty Cycle 2% Pulse
O:160 320,
Y:200
400.
*
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
I
B1
I
B2
I
B1
=-I
B2
=0.2A
DUTY CYCLE < 1%
=
I
B2
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=1V, I
C
=0.1A
V
CE
=1V, I
C
=2A
V
CE
=2V, I
C
=5A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
OUTPUT
20碌sec
5鈩?/div>
INPUT
I
B1
MIN.
-
-
60
160
50
-
-
-
-
-
TYP.
-
-
-
-
-
0.1
0.9
0.2
1.1
0.2
MAX.
10
10
-
400
-
0.3
1.2
1
2.5
1
UNIT
A
A
V
V
S
V
CC
=10V
Note) h
FE
(2) Classification :
2003. 7. 24
Revision No : 3
1/3
1
2
3
