SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
D
K
F
F
D
A
H
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
C
G
J
B
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
*
T
j
T
stg
RATING
60
50
6
3
6
500
1
150
-55
0.8t)
150
UNIT
V
V
V
A
A
mW
W
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h
FE
Rank
Lot No.
* : Package mounted on ceramic substrate(250mm
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
(1) Classification A:100 200,
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
B:140 280,
C:200
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=100
V
CE
=2V, I
C
=3A
I
C
=2A, I
B
=100
I
C
=2A, I
B
=100
V
CE
=10V, I
C
=50
V
CB
=10V, f=1
PW=20碌s
DC < 1%
=
INPUT
MIN.
-
-
100
35
-
-
-
Y
TYP.
-
-
-
-
0.19
0.94
150
25
70
650
35
MAX.
1
1
400
-
0.5
1.2
-
-
-
-
-
nS
V
V
Type Name
UNIT.
, I
E
=0
I
B1
R8
I
B2
25
-
-
-
VR
50
100碌
-5V
10I
B
1=-10I
B2
=I
C
=1A
470碌
25V
-
400
2001. 12. 6
Revision No : 4
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