SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : h
FE
=3000(Min.)
(V
CE
=2V, I
C
=1A)
C
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
E
F
G
D
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
80
60
10
4
0.5
15
150
-55 150
UNIT
V
V
V
A
A
W
N
J
K
L
M
O
1
2
3
P
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
桅3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter
Base-Emitter
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE(sat)
TEST CONDITION
V
CB
=80V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=3A
I
C
=3A, I
B
=30mA
I
C
=3A, I
B
=30mA
MIN.
-
-
60
3000
1000
-
-
TYP.
-
-
-
-
-
-
-
MAX.
20
100
-
-
-
1.5
2.0
V
UNIT
A
A
V
Saturation Voltage
2003. 7. 24
Revision No : 2
1/2
1
2
