SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB985.
F
H
C
KTD1347
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
A
Adoption of MBIT processes.
P
DEPTH:0.2
S
Q
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
G
J
F
H
M
E
M
L
R
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
60
50
6
3
6
1
150
-55
150
V
V
V
A
A
W
O
SYMBOL
RATING
UNIT
1
N
2
3
N
H
1. EMITTER
2. COLLECTOR
3. BASE
25
1.25
桅1.50
0.10 MAX
_
12.50 + 0.50
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
TEST CONDITION
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=2V, I
C
=100
V
CE
=2V, I
C
=3A
I
C
=2A, I
B
=100
I
C
=2A, I
B
=100
V
CE
=10V, I
C
=50
V
CB
=10V, I
E
=0, f=1
PW=20碌s
DC < 1%
=
INPUT
I
B1
R8
I
B2
25
MIN.
-
-
100
35
-
-
-
-
-
-
D
TYP.
-
-
-
-
0.19
0.94
150
25
70
650
35
MAX.
1
1
400
-
0.5
1.2
-
-
-
-
-
UNIT.
V
V
VR
50
nS
100碌
-5V
10I
B
1=-10I
B2
=I
C
=1A
470碌
25V
-
Note : h
FE
(1) Classification A:100 200, B:140 280, C:200
400
1999. 11. 30
Revision No : 1
1/3
1
2
3
