SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
KTC945
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz
Complementary to KTA733.
K
D
E
G
N
A
Excellent h
FE
Linearity.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
60
50
5
150
625
150
-55
150
UNIT
V
L
F
H
F
1
2
3
V
V
mA
mW
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
R:90 180,
Q:135
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
270,
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100 A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA Rg=10k , f=1kHz
P:200 400,
K:300 600
MIN.
60
50
5
-
-
90
-
-
80
-
-
TYP.
-
-
-
-
-
-
0.1
-
300
2.0
1.0
MAX.
-
-
-
0.1
0.1
600
0.25
1.0
-
3.5
10
V
V
MHz
pF
dB
UNIT
V
V
V
A
A
2001. 9. 14
Revision No : 2
1/2
1
2
