SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity.
Complementary to KTC9013S.
2
L
KTC9012S
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
-40
-30
-5
-500
500
350
150
-55 150
0.6
)
UNIT
V
V
V
mA
mA
mW
N
C
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
M
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
* P
C
: Package Mounted On 99.5% Alumina (10 8
Marking
h
FE
Rank
Lot No.
Type Name
BB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification F:96 135,
G:118
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
166,
H:144
TEST CONDITION
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-50mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, V
CE
=-1V
V
CE
=-6V, I
C
=-20mA, f=100MHz
V
CB
=-6V, I
E
=0, f=1MHz
202,
I:176
246
150
-
MIN.
-
-
96
-
TYP.
-
-
-
-0.1
-0.8
-
7.0
MAX.
-0.1
-0.1
246
-0.25
-1.0
-
-
V
V
MHz
pF
UNIT
A
A
2002. 9. 3
Revision No : 0
J
D
1/1
1
